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FDH50N50 / FDA50N50 500V N-Channel MOSFET
UniFET
FDH50N50 / FDA50N50
500V N-Channel MOSFET Features
* 48A, 500V, RDS(on) = 0.105 @VGS = 10 V * Low gate charge ( typical 105 nC) * Low Crss ( typical 45 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
!
"
G! GD S
!"
" "
TO-247
FDH Series
TO-3P
G DS
FDA Series
!
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDH50N50/FDA50N50
500 48 30.8 192 20 1868 48 62.5 4.5 625 5 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min.
-0.24 --
Max.
0.2 -40
Unit
C/W C/W C/W
(c)2004 Fairchild Semiconductor Corporation
1
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FDH50N50 / FDA50N50 Rev. A
FDH50N50 / FDA50N50 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDH50N50 FDA50N50
Device
FDH50N50 FDA50N50
Package
TO-247 TO-3P
Reel Size
-
Tape Width
-
Quantity
30 30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 500V, VGS = 0V VDS = 400V, TC = 125C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 24A VDS = 40V, ID = 48A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
500 ------
Typ.
-0.5 -----
Max Units
--25 250 100 -100 V V/C A A nA nA
On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.089 20 5.0 0.105 -V S
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 400V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 250V, ID = 48A RG = 25 -----4979 760 50 161 342 6460 1000 65 --pF pF pF pF pF
Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400V, ID = 48A VGS = 10V
(Note 4, 5) (Note 4, 5)
--------
105 360 225 230 105 33 45
220 730 460 470 137 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 48A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 48A VGS = 0V, IS = 48A dIF/dt =100A/s
(Note 4)
------
---580 10
48 192 1.4 ---
A A V ns C
2 FDH50N50 / FDA50N50 Rev. A
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FDH50N50 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
2
Figure 2. Transfer Characteristics
100
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
ID, Drain Current [A]
ID , Drain Current [A]
10
1
10
150 C! 25 C! -55 C!
Notes : 1. VDS = 40V 2. 250s Pulse Test
o o
o
10
0
1
Notes : 1. 250s Pulse Test o 2. TC = 25 C!
10
-1
10
-1
10
0
10
1
0.1 4 5 6 7 8 9 10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.4
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
160
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
0.3
120
RDS(ON) [],
VGS = 10V
0.2
80
0.1
VGS = 20V
150 C 40 25 C
Notes : 1. VGS = 0V 2. 250s Pulse Test
o
o
Note : TJ = 25 C
o
0.0 0 25 50 75 100 125 150 175
0 0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
12,000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd
Figure 6. Gate Charge Characteristics
12
VDS = 100V
VGS, Gate-Source Voltage [V]
10,000
Crss = Cgd
10
VDS = 250V VDS = 400V
Capacitance [pF]
8,000
8
6,000
Ciss Coss
6
4,000
4
Notes : 1. VGS = 0 V 2. f = 1 MHz
2,000
2
Note : ID = 48A
Crss
0 -1 10 10
0
10
1
10
2
0 0 20 40 60 80 100 120
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3 FDH50N50 / FDA50N50 Rev. A
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FDH50N50 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
2.5
BVDSS, (Normalized) Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.0
RDS(ON), (Normalized)
1.1
1.5
1.0
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 24 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
10
3
Figure 10. Maximum Drain Current vs. Case Temperature
50
Operation in This Area is Limited by R DS(on)
40
ID, Drain Current [A]
1 ms 10 ms
10
1
ID, Drain Current [A]
3
10
2
10 us 100 us
30
DC
20
10
0
Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
10
-1
10
0
10
1
10
2
10
0 25
50
75
100
o
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11. Typical Drain Current Slope vs. Gate Resistance
4,000 3,500 3,000 2,500
Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C
o
Figure 12. Typical Drain-Source Voltage Slope vs. Gate Resistance
45 40 35 30
Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C!
o
di/dt [A/S]
dv/dt [V/nS]
di/dt(on)
2,000 1,500 1,000 500 0 0 5 10 15 20 25 30 35 40 45 50
25 20 15 10 5 0 0 5 10
dv/dt(on)
dv/dt(off)
di/dt(off)
15
20
25
30
35
40
45
50
RG, Gate resistance []
RG, Gate resistance []
4 FDH50N50 / FDA50N50 Rev. A
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FDH50N50 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Typical Switching Losses vs. Gate Resistance
1,000
Figure 14. Unclamped Inductive Switching Capability
100
Notes : 1. If R = 0 tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD)
800
Eoff
600
IAS, Avalanche Current [A]
2. If R 0 tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1]
Energy [J]
Eon
400
Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C!
o
10
Starting TJ = 150 C
o
Starting TJ = 25 C
o
200
0 0 5 10 15 20 25 30 35 40 45 50
1 0.01
0.1
1
10
100
RG, Gate resistance []
tAV, Time In Avalanche [ms]
Figure 15. Transient Thermal Resistance Curve
10
-1
D=0.5 0.2 0.1 0.05
Notes : o 1. Z JC(t) = 0.2 C/W Max. 2. Duty Factor, D=t1 /t2 3. T JM - T C = P DM * Z JC(t)
ZJC(t), Thermal Response
10
-2
0.02 0.01 single pulse
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1, Square W ave Pulse Duration [sec]
5 FDH50N50 / FDA50N50 Rev. A
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FDH50N50 / FDA50N50 500V N-Channel MOSFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
6 FDH50N50 / FDA50N50 Rev. A
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FDH50N50 / FDA50N50 500V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
7 FDH50N50 / FDA50N50 Rev. A
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FDH50N50 / FDA50N50 500V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I14
8 FDH50N50 / FDA50N50 Rev. A
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